Memoria SODIMM DDR3 Kingston 8Gb 1600 MHz (7299)

CL (IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) - Row Active Time (tRASmin) 35ns (min.) UL Rating 94 V - 0 Operating Temperature 0° C to 85° C Storage Temperature -55° C to +100° C Más información: KVR16S11/8WP <ul> <li> <p>JEDEC standard 1.5V Power Supply</p> </li> <li> <p>VDDQ = 1.5V</p> </li> <li> <p>800MHz fCK for 1600Mb/sec/pin</p> </li> <li> <p>8 independent internal bank</p> </li> <li> <p>Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5</p> </li> <li> <p>Programmable Additive Latency: 0, CL - 2, or CL - 1 clock</p> </li> <li> <p>8-bit pre-fetch</p> </li> <li> <p>Burst Length: 8 (Interleave without any limit, sequential with starting address &ldquo;000&rdquo; only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]</p> </li> <li> <p>Bi-directional Differential Data Strobe</p> </li> <li> <p>Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm &plusmn; 1%)</p> </li> <li> <p>On Die Termination using ODT pin</p> </li> <li> <p>Average Refresh Period 7.8us at lower than TCASE 85&deg;C, 3.9us at 85&deg;C &lt; TCASE &lt; 95&deg;C</p> </li> <li> <p>Asynchronous Reset</p> </li> <li> <p>PCB : Height 1.180&rdquo; (30.00mm), double sided component</p> </li> </ul>

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